Both the Luggin capillary and polymer tube were filled with the solution for Cu deposition. The Luggin capillary Combretastatin A4 mw was placed on Si or PS, and it defined a clear small

sensing point for the reference electrode near the sample surface. The equipment used to conduct electrochemical processes was the AUTOLAB PGSTAT302n potentiostat/galvanostat (Utrecht, The Netherlands). The gravimetric method was applied to determine the porosity of PS and the mass of the deposited metal. Mass measurements were performed with a Sartorius CP225D micro/analytical electronic balance (Goettingen, Germany). The instrument mass error was 10 μg. The morphology of the samples was studied by SEM (Hitachi S-4800, Chiyoda-ku, Japan) with a resolution of 1 nm. The analysis of the microstructure of the samples was performed with LEO EVO 50 scanning electron microscope (Carl Zeiss AG, Oberkochen, Germany) equipped with an Oxford Inca EBSD detector (Oxford Instruments plc, Oxfordshire, UK). Software from HKL Technology

(Hobro, Denmark) was used for phase identification. An electron beam scanned the see more surface of the tilted sample placed in the SEM with a step size of 10 nm. The sample was steeply tilted to about 70° from the incident beam. EBSD measurements were performed at an electron high tension of 20 kV and probe current of 10 nA. A phosphor screen coupled to a Peltier cooled CCD camera was fluoresced by electrons from the sample to form the diffraction pattern [20]. Results and discussion In this Immune system work, our attention was paid to study the initial stages of Cu immersion deposition on PS consisting of ordered cylindrical pores which are perpendicularly oriented to the surface of the original Si substrate [21]. Exactly such kind of PS has been reported to be one of the

most suitable host materials for the formation of NCs [22, 23]. In particular, variation of the PS parameters without disordering pores allows the controlling of features of the final material. To understand peculiarities of Cu immersion deposition on the surface of PS, we firstly studied the process on the bulk Si because the surface of the PS pores presents Si nanoplanes of different crystal orientations [10]. Anodizing regimes used in this work provided formation of the uniform PS layers of 1-μm thick and 50% to 55% porosity. The diameter of pore channels and thickness of pore walls https://www.selleckchem.com/products/BKM-120.html varied in the range from 10 to 50 nm, according to the evaluation of SEM images [9]. Morphology of Cu/Si and Cu/PS/Si samples Figure 1 shows SEM views of the surface of the bulk Si (Figure 1a,c) and PS (Figure 1b,d) samples after immersion into the solution for Cu deposition for 4 s. Figure 1a,b corresponds to the substrates based on Si (100), while Figure 1c,d was formed on Si (111). It is well observed that Cu deposited on PS as a quasi-continuous film that consists of connected NPs (Figure 1b,d), while bulk Si was covered with the separated NPs (Figure 1a,c).